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By G.M. Crean,M. Locatelli,J. McGilp

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1. 543 mm. Lower traces are expanded signals. Fig. 4. Acoustic micrograph of a calibration grid obtained with the acoustic lens in Fig. 3 operated at 125 MHz. 475 500 MHz 525 Fig. 2. Reflection coefficient measurement using an HP8754A network analyzer for the PZT ultrasonic trans­ ducer in Fig. 1 but in the frequency range between 475 and 525 MHz. MHz respectively. The lower traces in Figs. 1(a) and 1(b) are expanded signals. The typical band­ width of the fabricated PZT transducers is more than 60% of center frequency.

10 Three-point bending Four-point bending Acoustic Acoustic Acoustic greater than 1 mm) by acoustic techniques [15, 16] and bending tests [13, 14]. E, G and v values are also similar to those reported for sintered aSiC by Coblenz [17] and Edington et al. e. 24. 5. Conclusions Mechanical characterization by conventional methods of CVD SiC thin films is complex. The use of acoustic techniques based on measure­ ments of longitudinal and shear wave propagation velocities could be a solution. In this paper longi­ tudinal velocities were determined by micro­ echography and reflectometry and shear velocities were determined by microechography and acoustic signature.

Soc. Bull, 48(1969) 859. 14 T. D. Gulden, Mechanical properties of polycrystalline £-SiC, J. Am. Ceram. Soc, 52 (1969) 585. 15 C. H. MacMurtry, M. R. Kasprzyk and R. G. Naum, in R. C. ), Microstructural Effects in Silicon Carbide, Proc 3rd Int. Conf. on Silicon Carbide, Miami Beach, FL, 1973, University of South Carolina Press, Columbia, SC, 1973, p. 411. 16 P. Popper and I. Mohyuddin, The preparation and properties of pyrolytic silicon carbide, in P. ), Special Ceramics, Academic Press, New York, 1965, p.

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Acoustic, Thermal Wave and Optical Characterization of Materials by G.M. Crean,M. Locatelli,J. McGilp

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