By A. Mukherjee
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Extra info for Advanced Microwave, Millimeter Wave Technols - Devs, Circs, Systs
Fig. 11. Design of the four-pole band stop filter that can be discretely tuned by thermally activated each of the VO2-charged resonators; the insert shows the design of the VO2-based switch (activated by a Ni:ta-C pattern) which was adapted to the filter’s design. When individually activated, the metallic VO2 pattern (resistance of 78 ) will electrically closed its corresponding U-shaped resonator. ) was done in such a way that the absorption band of the activated resonator would be then shifted far away from the operation frequency band of the filter.
5, the VO2 films Exploiting the semiconductor-metal phase transition of VO2 materials: a novel direction towards tuneable devices and systems for RFmicrowave applications 41 deposited on Al2O3 (R) and on SiO2/ Si substrates showed a very sharp phase transition witnessing of abrupt change (transmission change factors between 4 and 8) of its optical properties (drastic modification of its refractive index and absorption coefficient). One may notice on the graph on Fig. , 2007). a. b. Fig. 5. Optical transmission spectra vs.
The design of a fabricated VO2-based switch which can be activated by the heat generated in a Ni:ta-C thin film is presented in the optical micrscope image on Fig. 9 a. a. b. Fig. 9. a) Optical microscopy image of a VO2-based two terminal switch (400-m long, 200m wide, 200-nm thick pattern between two gold electrodes) which is activated by the current induced heating in a 10% wt. Ni:ta-C pattern situated above it (340-m long, 150-m wide and 100-nm thick) and b) optical images showing the sequential activation (phase transition) of the underneath VO2 layer when applying periodical squared voltage pulses (80V amplitude, 1Hz) on the Ni:ta-C pattern (VO2-S-semiconducting phase and VO2-M – the mettalic state of the VO2 layer.
Advanced Microwave, Millimeter Wave Technols - Devs, Circs, Systs by A. Mukherjee